summary: This paper mainly studies the electrical properties of Schottky diodes formed on N-type silicon by thermally growing palladium silicides . These structures include multilayer, co-deposition, and traditional single layer metal evaporation structures.
Through various thin film analysis techniques, such as X-ray diffraction, Ojey electron spectroscopy, and transmission electronmicroscopy , we found that the traditional single layer metal structure will undergo drastic
changes in the interface during the silicide process, not only with a deeper contact depth, but also with poor interface flatness. This phenomenon is more obvious when the metal thickness increases.
However, the Pd Si /Si interface obtained after the thermal growth of the test piece evaporated by the multilayer and co-deposition methods is very flat, and these results are quite consistent with the electrical changes observed on the Schottky diode. For example, the current-voltage characteristics of Schottky diodes made by multilayer and co-deposition methods, including leakage current, breakdown voltage and thermal stability, are better than those of traditional single-layer metal structures, and increase with the increase of metal thickness.
Therefore, this research is of great value to the development of actual integrated circuit manufacturing processes, especially how to select metal to obtain the best electrical properties.
Detail See Here：National Chiao Tung University Institutional Repository/ Publications/ Thesis
https://ir.lib.nycu.edu.tw/handle/11536/54366